Semiconductor device with vertical electron injection and method for making same

ABSTRACT

The present invention relates to a semiconductor device with vertical electron injection, comprising a support substrate ( 2 ), a structure comprising at least one monocrystalline thin film ( 7 ) transferred onto the support substrate and integral with the support substrate, and at least one electronic component, the support substrate ( 2 ) comprising at least one recess enabling electric or electronic access to the electronic component, through the monocrystalline thin film, the device also comprising means ( 13, 14 ) enabling vertical electron injection into the electronic component.

TECHNICAL FIELD

[0001] The present invention relates to a semiconductor device withvertical electron injection. It also concerns a manufacturing method forsuch a device.

[0002] The semiconductor device with vertical electron injection isproduced in an active layer in semiconducting material with a small gapor a big gap. However, the invention proves to be of particular interestin the case of an active layer in semiconducting material with a biggap.

STATE OF PRIOR ART

[0003] Semiconductors are characterised by their forbidden band or gapseparating the last filled states of the valence band and the followingempty states in the conduction band. Among the semiconductors, one candistinguish between semiconductors with a small gap, such as silicon andgermanium, and semiconductors with a big gap such as, for example, GaNand SiC.

[0004] At present it is extremely difficult or even impossible to obtainsolid substrates in a semiconductor with a big gap. In the case of GaNfor example, no solid substrate of electronic quality exists despiteintense research carried out in this field. On the other hand,hetero-epitaxial GaN on a solid substrate in sapphire or in SiC exists.This technique was developed for production of blue diode typeoptoelectronic components.

[0005] Nonetheless, epitaxy of GaN on sapphire is made particularlydelicate because of the difference in lattice structure existing betweenGaN and sapphire (of the order of 16%). Therefore, obtaining crystallinelayers of sufficiently high quality for producing optoelectronic devicesrequires perfecting sophisticated epitaxy methods. The use of thesapphire substrate is essentially explained by its structural andchemical compatibility with GaN, its low cost and its availability underthe form of large diameter substrate. The electrically insulatingproperty of sapphire requires production, in the epitaxial GaN, ofhorizontal components with electrodes located in the front face.

[0006] The other method used for retail components is that of GaN on asolid SiC substrate. SiC substrates remain rare and very expensive. Thisis the method developed and marketed by the company of Cree ResearchInc., profiting from the advantage it has of retailing the major part ofSiC substrates. The interest of solid SiC for epitaxy and the productionof devices with a GaN base is evident. First of all, the low differencein lattice structure (3.5%) between SiC and GaN makes it possible tosimplify epitaxy methods while still producing layers with highcrystalline quality. Furthermore, the use of a conducting SiC substratemakes it possible to produce a vertical component for passing current(that is, with an electrode on each face). This structure enablesproduction of components of smaller size than those produced on aninsulating substrate, which is of interest from the economic point ofview. Moreover, the use of SiC, with its high thermal conductivity,makes it possible to adjust or lower the component temperature duringits operation. This is an important point as far as performance, servicelife and reliability are concerned.

[0007] Other methods are also being studied, but their present state ofdevelopment restricts them to laboratory use. The general approachconsists of using a substrate of solid silicon in order to benefit fromthe low cost and large size of these substrates. Thus one can obtain GaNon SiC covering silicon. These techniques, developed under laboratoryconditions, rely on the use of a film of epitaxial cubic SiC either onan SOI substrate or directly on a solid silicon substrate. This SiClayer must make it possible to facilitate epitaxy by reducing thedifference in the lattice parameter between the GaN and the silicon,that is to arrive at a configuration of epitaxial GaN on SiC. Apart fromthe problem of producing epitaxial GaN, the first epitaxy of SiC posessignificant technical problems. However, the growth of GaN on such astructure is of particular interest because it would make it possible toobtain GaN with cubic structure (sapphire obtains a hexagonal structure)which, because of its properties, is interesting for optoelectronicapplications. For the moment this method is still at the research stage.

[0008] Finally, a more recent method relates to the direct epitaxy ofGaN on silicon, without any buffer film of SiC. For this, one usessilicon (111). This approach, based on a principle equivalent to thatadopted for epitaxy on sapphire, suffers at present from being farbehind, relative to other techniques. Nonetheless, correct control ofthe material silicon makes it possible to envisage using electricallyinsulating or conducting epitaxial support substrates, leaving a certainfreedom for the operating mode of the epitaxied device (vertical orhorizontal).

[0009] The optoelectronic components produced on the above-mentionedmaterials therefore have either a lateral structure (with two electrodeslocated on the front face of the substrate), or a vertical structurewith one electrode on the active layer (generally in GaN) and anotherelectrode on the rear face of the solid substrate (in SiC, for example).According to the structure adopted, or imposed by the nature of thesubstrate, the size of the chip evidently varies. From a strictlyeconomic point of view, the production of a vertically operational chipis clearly more advantageous because it makes it possible to producemore compact devices.

[0010] Furthermore, the nature of the substrate chosen for epitaxy hasan influence on the performance of the device via the problem of heatdissipation during operation. From this point of view, solid SiC has aconsiderable advantage. The limitations recognised concerning devicesproduced on GaN supported by sapphire, are under study at present. Twomethods are described in publications concerning the solution of thisproblem for sapphire. Each depends on eliminating the sapphire substrateafter producing active epitaxial layers.

[0011] The first method depends on eliminating the sapphire substrateand producing a thick epitaxy of GaN (greater than 100 μm) at the rearface in order to obtain a self-supporting rigid membrane. This againmeans producing a GaN substrate. This approach makes it possible toproduce a device with vertical operation and to dissipate the generatedheat.

[0012] The second method depends on eliminating the sapphire substrateand adhering the active layer onto an electrically and thermallyconducting sole (adhesion on a copper substrate, for example). Thus itwould be possible to obtain a vertically operational device enablingdissipation of the produced heat.

[0013] Thus it can be understood that the SiC approach represents a verypromising future for developing optoelectronic branches with a GaN base.The trend for growth techniques other than those on SiC is to producedevices with vertical current flow and to eliminate the generated heatas much as possible during operation of the device, whatsoever theepitaxial support. In the case of epitaxy on sapphire, this substrateonly plays the role of epitaxial support and no longer limits theoperation of devices because it can be eliminated.

DESCRIPTION OF THE INVENTION

[0014] The present invention proposes a new device that can be lesscostly than prior art solutions, for obtaining a semiconductor devicewith vertical electron injection.

[0015] A first aim of the invention consists of a vertical electroninjection semiconductor device comprising a support substrate, astructure comprising at least one monocrystalline thin film transferredonto the support substrate and integral with the support substrate, atleast one electronic component, the support substrate comprising atleast one recess enabling electric or electronic access to theelectronic component, through the monocrystalline thin film, the devicealso comprising means enabling vertical electron injection into theelectronic component.

[0016] The structure may comprise at least one active layer formed bycrystal growth of semiconducting material on the monocrystalline thinfilm, the electronic component being produced in said active layer. Theepitaxial active layer is homogeneous or heterogeneous depending on theapplications. The monocrystalline thin film can be an active layer, fromwhich the electronic component is formed.

[0017] Possibly, the device can furthermore comprise a layer called anadhesion layer, situated between the support substrate and the structureand making it possible to solidarise the monocrystalline thin film onthe support, the adhesion layer allowing electric or electronic accessto the electronic component. This adhesion layer can be in SiO₂.

[0018] Possibly, the adhesion layer is insulating and comprises at leastone recess enabling electric or electronic access to the electroniccomponent. The adhesion layer can also be conducting or semiconducting.

[0019] The monocrystalline thin film can comprise at least one recessenabling direct electric or electronic access to the electroniccomponent.

[0020] Advantageously, the support substrate can be in silicon, in SiC,in A1N, in sapphire or in GaN, the monocrystalline thin film can be inSiC, in silicon, in GaN, in sapphire or in ZnO, and the active layer cancomprise a semiconducting material selected from among the groupconsisting of SiC, GaN, the compounds III-V and their derivatives, anddiamond.

[0021] The electronic component can comprise at least one junctionproduced from two semiconductors of the same nature or of differentnatures. It can comprise at least one metal-semiconductor type junction.Furthermore, it can comprise at least one stack of thesemiconductor-metal-oxide type.

[0022] According to an embodiment of the invention, the means enablingvertical electron injection into the electronic component comprise anelectrode set on the electronic component and an electrode set under theelectronic component, in said recess enabling access to the electroniccomponent. In this case, an earth can be provided in said recess, incontact with said electrode set under the component in order toconstitute a heat sink.

[0023] According to another embodiment of the invention, the electroninjection being achieved by means of an electron beam directed onto theelectronic component by passing through said recess, the means enablingvertical electron injection comprise a conducting coating for guidingthe electrons towards the electronic component.

[0024] According to a further embodiment of the invention, the recess inthe support substrate comprises cells enabling electric or electronicaccess to electronic components formed from the structure.

[0025] The electronic component can be selected from among the groupconsisting of light emitters, light detectors, power electroniccomponents and diodes.

[0026] The structure can be chosen to be vacuum sealed. In this case, ifthe electronic component is a component able to emit a light beam inresponse to an electron beam received, the monocrystalline thin film canbe such that it allows passage of said electron beam. The structure canform a membrane that is deformable under the effect of a pressuredifference, said electronic component being a component providing asignal representative of the deformation undergone by the membrane.

[0027] A second aim of the invention consists of a manufacturing methodfor such a semiconducting device with vertical electron injection,characterised in that it comprises the following stages:

[0028] transfer of the monocrystalline thin film onto a first face ofthe support substrate,

[0029] production of at least one electronic component from thestructure,

[0030] formation of at least one recess from a second face of thesubstrate to allow electric or electronic access to the electroniccomponent through the monocrystalline thin film,

[0031] production of means allowing vertical electron injection into theelectronic component.

[0032] The method can furthermore comprise a stage for formation of atleast one active layer by crystal growth of semiconducting material onthe monocrystalline thin film, the electronic component being producedin said active layer, the crystal growth being produced before or aftertransfer. If the thin film is an active layer, the electronic componentcan be formed from this monocrystalline thin film.

[0033] Possibly, the electronic component can be partly made before thetransfer; especially when the active layer is produced before thetransfer.

[0034] According to a particularly advantageous embodiment of theinvention, the transfer stage of the monocrystalline thin film comprisesthe following operations:

[0035] definition of said monocrystalline thin film in a substrate ofmonocrystalline material by introducing gaseous species into thissubstrate of monocrystalline material in order to create a fracturezone, the monocrystalline thin film being located between one face ofthe substrate in monocrystalline material and the cleavage zone,

[0036] solidarisation of said monocrystalline thin film on the firstface of the support substrate,

[0037] fracture separation of the monocrystalline thin film from therest of the substrate of monocrystalline material, the separation beingproduced before or after the solidarisation operation, obtained forexample by molecular adhesion.

[0038] Preferably, the transfer of said monocrystalline thin film iscarried out through the intermediary of an adhesion layer. This adhesionlayer can be in SiO₂.

[0039] According to an application variant, the production of meansenabling vertical electron injection into the electronic componentcomprises depositing an electrode on the electronic component anddepositing an electrode under the electronic component, in said recessenabling access to the electronic component. The method can thencomprise the deposit of an earth in said recess, in contact with saidelectrode set under the component in order to constitute a heat sink.

[0040] According to another application variant, the method comprisesthe deposit of a conducting coating able to guide an electron beamdirected onto the electronic component passing through said recess.

[0041] According to a further application variant, the method alsocomprises the formation of cells prolonging the recess in the supportsubstrate to enable electric or electronic access to the electroniccomponents formed from the structure.

BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The invention will be understood better and other advantages andparticularities will become clear by reading the description below,evidently given as a non-limiting example, and accompanied by theattached drawings in which:

[0043]FIGS. 1A to 1E show the main stages of a manufacturing method of asemiconductor device with vertical electron injection according to theinvention,

[0044]FIG. 2 shows, in cross-section, another semiconductor device withvertical electron injection according to the invention,

[0045]FIG. 3 shows the device of FIG. 2 installed on equipment providedwith a cathode with micro-points,

[0046]FIG. 4 shows, in cross-section, another semiconductor device withvertical electron injection and with cell structure, according to theinvention.

DETAILED DESCRIPTION OF EMBODIMENTS ACCORDING TO THE INVENTION

[0047] The manufacture of a semiconductor device with vertical electroninjection according to the invention comprises the transfer of amonocrystalline thin film of very high crystalline quality(semiconducting or not, insulating or electrically conducting) onto thefront face of a substrate, semiconducting or not. This transfer can becarried out through the intermediary of an insulating thin film,metallic or semiconducting. The required active layer or layers areobtained by crystal growth before or after transfer. One or severalelectronic components are thus formed. The rear face of the substrate ismachined or micro-machined locally in order to create a membrane. Themonocrystalline thin film can possibly be thinned.

[0048] According to an embodiment of the invention, the active layer andthe monocrystalline thin film form a single and same layer.

[0049] The electronic component or components can be manufactured beforeor after the formation of the membrane. Nonetheless, it is preferable tomanufacture the electronic components before forming the membrane inorder to relax the mechanic stresses in the device during manufacture.

[0050] Advantageously, transfer of the monocrystalline thin film can becarried out using the method known under the name of Smartcut® anddescribed in particular in the document FR-A-2 681 472 (corresponding tothe U.S. Pat. No. 5,374,564). FIGS. 1A and 1B show this transfer method.

[0051]FIG. 1A shows the fixation of a first substrate 1 in SiC onto asecond substrate 2 in silicon, with an adhesion interface. The substrate1 possesses a layer 3 of SiO₂ on its junction face with the substrate 2.An ionic implantation produced through this face has made it possible tocreate a layer of micro-cavities 5 separating the substrate 1 into athin film 7 and a remainder part 9 of the substrate. In this example,the substrate 2 also possesses a layer 4 of SiO₂ on its junction facewith the substrate 1. Nonetheless, the two opposite faces can be ofdifferent nature on condition that adhesion is possible.

[0052] Advantageously, the junction of the two substrates is obtained bymolecular adhesion. Once the junction has been established, one proceedsto the fracture of the substrate 1 along the zone of micro-cavities 5.This fracture can be obtained by means of heat treatment and/or byapplication of mechanical stresses. The fracture provides the structureshown in FIG. 1B and constituted of a support substrate 2 in siliconsupporting first of all a layer 6 in SiO₂ (formed by the combination oflayers 3 and 4), and then a layer 7 of SiC. It would also be possible totransfer the layer 7 from its initial substrate 9 to the supportsubstrate 2 via at least one intermediary substrate.

[0053] A thin film 10 of GaN is then epitaxied on the layer 7 of SiCwith its free face prepared for this. This is shown in FIG. 1C. Thelayer 10 of GaN constitutes the active layer in which the electroniccomponent can be formed.

[0054] As above-mentioned, the layer 10 could have been produced beforetransfer. In this case, the transfer of the structure formed by thelayer 7 and the layer 10 must be made either by means of an intermediarysupport, or directly, the layer 7 needing to be eliminated for certainapplications.

[0055] In order to obtain electric or electronic access to the componentproduced in the layer 10, a recess is made starting from the rear faceof the substrate 2. FIG. 1D shows that the recess 11 made in thesubstrate 2 is prolonged into the layer 6 of SiO₂, as far as the layer 7of SiC. This layer 7 could also possibly be recessed.

[0056] Taking into account the different applications aimed at by theinvention, at least two cases of electron excitation can bedistinguished. The first case concerns an electron excitation throughvertical passage of the current into the component formed in the activelayer by two electrodes, one of these electrodes being deposited on thetop of the component and the other being deposited under the component.The second case involves electron excitation by vertical passage ofcurrent in the component following electron injection by electronbombardment on the rear face of the device.

[0057] The first case requires the presence of electrodes on top of andunderneath the device as shown in FIG. 1E. An electrode 13 has beenformed on the front face of the electronic component produced in thelayer 10. A conducting material 14 is deposited on the rear face of thedevice. It covers the recessed rear face of the substrate 2 as well asthe apparent face of the layer 7 of SiC. The electric connection withthe component is obtained through the layer 7 of SiC which iselectrically conducting. Possibly, the recess is filled with aconducting material advantageously forming a heat sink 15, making itpossible to evacuate the heat produced by the device during operation.An electrode 16 is deposited on the heat sink 15 to allow joining anelectric connection wire. In the absence of the material 15, the secondelectrode is formed by the conducting material 14.

[0058]FIG. 2 shows, in cross section, a device 20 according to theinvention and with electron excitation by vertical passage of currentthrough the device, the current being due to electron bombardmentdirected towards the rear face of the device.

[0059] The device 20 is produced as above, from a stacked structurecomprising a substrate 21 in silicon, a layer 22 of SiO₂, and a thinfilm 23 of SiC. A recess 24 is made in the rear face of the substrate 21as far as the thin film 23 of SiC. A layer of GaN has been epitaxiedfrom the layer 23 of SiC and an electronic component 25 has been formedfrom the layer of GaN. In the example shown, the component 25 is a lasersource. It is equipped on two opposite flanks with mirrors 26 and 27enabling optical amplification. The production of such mirrors is knownto those skilled in the art.

[0060] In this embodiment, the recess is of truncated shape withcircular or polygonal cross sections. In order to guide an electron beam30, arriving on the rear face of the device, towards the component 25, aconducting layer 28 is deposited on the rear face of the device. Thisconducting layer 28 acts as an anode relative to the electron beam andmust allow it to pass. Possibly, a conducting layer 28′ can be depositedon the component 25 and connected electrically to the conducting layer28 in order to define a potential and to direct the injected electronsmore efficiently towards the rear face of the device. In response to theexcitation by the electron beam 30, the component 25 will emit a laserbeam 31.

[0061]FIG. 3 shows, as an example of an embodiment, the device 20 shownin FIG. 2 installed on equipment 40 provided with a micro-point cathode.The equipment 40 comprises a tubular chamber 41 with one end 42 providedwith a tip 43 through which the vacuum is formed in the chamber 41. Thetip 43 can contain a getter 44. The other end 45 of the chamber 41comprises an opening which is closed by the device 20, the recess 24 ofthe device 20 (see FIG. 2) being turned towards the inside of thechamber 41.

[0062] Inside the chamber 41, the equipment 40 comprises a cathode withmicro-points 46 supplied live in appropriate fashion relative to theearth. The conducting layer 28 of the device 20 is also connected to theearth. When in use, the cathode with micropoints 46 emits an electronbeam 30 in the direction of the device 20.

[0063] As an example, the micro-points can be brought to −10 kV, theextraction grid of the cathode to about 50 or 100 V above this voltage,that is to −9950 or −9900 V. The conducting layer 28 of the rear face ofthe device 20 ensures that the voltage is well defined and thattherefore the electrons will be certain to enter the recess of thedevice, crossing the thin film in SiC and penetrating the component 25.

[0064] The thin film 23 of the device 20 provided with the conductinglayer 28 and the component 25 plays the role of a sealed vacuum membranein this application. It is permeable to electrons and serves asepitaxial substrate. The device has the advantages of compactness and ofintegration into a piece of equipment.

[0065]FIG. 4 shows, in cross section, another semiconductor device withvertical electron injection and cell structure, according to theinvention.

[0066] The device of FIG. 4 comprises, superposed, a substrate 51 insilicon, a layer 52 of SiO₂ and a thin film 53 of SiC. A layer of GaNhas been epitaxied from the layer of SiC and two electronic components54 and 55 (laser sources here) have been formed from the layer of GaN.

[0067] A recess 56 has been made from the rear face of the substrate 51.This recess is prolonged by two cells 57 and 58 revealing parts of thethin film 53 of SiC situated under the components 54 and 55. Between thecells 57 and 58 there exists a part 59 of the initial structure actingas strengthener. This strengthener enables the membrane, constituted bythe free part of the thin film 53, to be made mechanically rigid. Thusone avoids risks of the membrane bursting when put under vacuum inequipment such as that of FIG. 3. It is to be noted that the crosssection of the cells can be hexagonal just like a honeycomb element.

[0068] In particular, the invention has the following advantages. Itmakes it possible to manufacture a semiconductor device, especially witha big gap, electronic or optoelectronic, on a low cost substrate, forexample in silicon, using well known techniques for transfer of layers,deep engraving and metallizing. It allows integration of an electronicdevice on a monocrystalline membrane. It enables the creation of avacuum sealed membrane, permeable to an electron beam focussed on therear face of the membrane whose front face supports one or severalelectronic components. It enables the production of verticalsemiconductor devices on a substrate which is not necessarily anelectrical conductor throughout the whole of its volume. The substratecan possibly possess an integrated heat sink. The manufacture ofvertical structure components allows a reduction in the size ofcomponents. The invention makes it possible to manufacture verticalsemiconductor devices with low electrical resistance through replacementof the solid substrate by a semiconducting thin film. It makes itpossible to integrate a laser on a micro-machined torch through theintermediary of a membrane which assures a three-fold role: sealing,permeability to electrons, and epitaxial substrate for the GaN.

1. Semiconductor device with vertical electron injection comprising asupport substrate (2, 21, 51), a structure comprising at least onemonocrystalline thin film (7, 23, 53) transferred onto the supportsubstrate and integral with the support substrate, at least oneelectronic component (25, 541 55), the support substrate comprising atleast one recess (11, 24, 56) enabling electric or electronic access tothe electronic component through the monocrystalline thin film, thedevice also comprising means enabling vertical electron injection intothe vertical component.
 2. Device according to claim 1, characterised inthat the structure comprises at least one active layer (10) formed bycrystal growth of the semiconducting material on the monocrystallinethin film (7, 23, 53), the electronic component (25, 54, 55) beingproduced in said active layer (10).
 3. Device according to claim 1,characterised in that the monocrystalline thin film is an active layerfrom which the electronic component is produced.
 4. Device according toany one of claims 1 to 3, characterised in that it furthermore comprisesa layer (6, 22, 52), called adhesion layer, situated between the supportsubstrate (2, 21, 51) and the structure and enabling solidarisation ofthe monocrystalline thin film on the support, the adhesion layerenabling electric or electronic access to the electronic component. 5.Device according to claim 4, characterised in that the adhesion layer(22) is insulating and comprises at least one recess enabling electricor electronic access to the electronic component (25).
 6. Deviceaccording to claim 4, characterised in that the adhesion layer isconducting or semiconducting.
 7. Device according to any one of claims 1to 6, characterised in that the monocrystalline thin film comprises atleast one recess enabling direct electric or electronic access to theelectronic component.
 8. Device according to claim 1, characterised inthat the support substrate (2, 21, 51) is in a material selected fromthe group consisting of silicon, SiC, AlN, sapphire and GaN.
 9. Deviceaccording to claim 1, characterised in that the monocrystalline thinfilm (7, 23, 53) is in a material selected from the group consisting ofSiC, silicon, GaN, sapphire or ZnO.
 10. Device according to claim 5,characterised in that the adhesion layer (6, 22, 52) is in SiO₂. 11.Device according to claim 2, characterised in that the active layer (10)comprises a semiconducting material chosen among SiC, GaN, the compoundsIII-V and their derivatives, and diamond.
 12. Device according to anyone of claims 1 to 11, characterised in that the electronic componentcomprises at least one junction produced from two semiconductors of thesame nature or of different natures.
 13. Device according to any one ofclaims 1 to 11, characterised in that the electronic component comprisesat least one junction of the metal-semiconductor type.
 14. Deviceaccording to any one of claims 1 to 11, characterised in that theelectronic component comprises at least one stack of thesemiconductor-metal-oxide type.
 15. Device according to any one ofclaims 1 to 14, characterised in that the means enabling verticalelectron injection into the electronic component comprise an electrode(13) set on the electronic component and an electrode (14) set under theelectronic component, in said recess enabling access to the electroniccomponent.
 16. Device according to claim 15, characterised in that anearth (15) is provided in said recess, in contact with said electrode(14) set under the component in order to constitute a heat sink. 17.Device according to any one of claims 1 to 14, characterised in thatelectron injection is carried out by means of an electron beam (30)directed onto the electronic component (25) passing in said recess (24),the means enabling vertical electron injection comprising a conductingcoating (28) for guiding the electrons towards the electronic component(25).
 18. Device according to any one of claims 1 to 17, characterisedin that the recess (56) of the support substrate (51) comprises cells(57, 58) enabling electric or electronic access to the electroniccomponents (54, 55) produced from the structure.
 19. Device according toclaim 1, characterised in that said electronic component is selectedfrom the group consisting of light emitters, light detectors, powerelectronic components and diodes.
 20. Device according to any one ofclaims 1 to 7, characterised in that the structure is vacuum sealed. 21.Device according claim 20, characterised in that the electroniccomponent (25), being a component able to emit a light beam in responseto a received electron beam (30), the monocrystalline thin film (23) issuch that it allows passage of said electron beam.
 22. Device accordingto claim 20, characterised in that the structure forms a membranedeformable under the effect of a pressure difference, said electroniccomponent being a component providing a signal indicative of thedeformation undergone by the membrane.
 23. Manufacturing method for asemiconductor device with vertical electron injection according to claim1, characterised in that it comprises the following stages: transfer ofthe monocrystalline thin film (7) onto a first face of the supportsubstrate (2), production of at least one electronic component from thestructure, formation of at least one recess (11) from a second face ofthe substrate (2) to enable electric or electronic access to theelectronic component through the monocrystalline thin film (7),production of means (13, 14) allowing vertical electron injection intothe electronic component.
 24. Method according to claim 23,characterised in that it furthermore comprises a stage of formation ofat least one active layer (10) by crystal growth of semiconductingmaterial on the monocrystalline thin film (7), the electronic componentbeing produced in said active layer, the crystal growth being before orafter transfer.
 25. Method according to claim 23, characterised in thatthe monocrystalline thin film is an active layer, the electroniccomponent being produced from this monocrystalline thin film
 26. Methodaccording to claim 23, characterised in that the transfer stage for themonocrystalline thin film (7) comprises the following operations:definition of said monocrystalline thin film (7) in a substrate ofmonocrystalline material (1) by introducing gaseous species into thissubstrate of monocrystalline material in order to create a fracture zone(5), the monocrystalline thin film (7) being located between one face ofthe substrate in monocrystalline material (1) and the cleavage zone (5),solidarisation of said monocrystalline thin film on the first face ofthe support substrate (2), fracture separation of the monocrystallinethin film (7) from the rest (9) of the substrate (1) of monocrystallinematerial, the separation being produced before or after thesolidarisation operation.
 27. Method according to any one of claims 23to 26, characterised in that the transfer of said monocrystalline thinfilm is carried out through the intermediary of an adhesion layer (6).28. Method according to claim 26, characterised in that thesolidarisation of said thin film is obtained by molecular adhesion. 29.Method according to any one of claims 23 to 28, characterised in thatthe transfer stage of the monocrystalline thin film (7) is formed on afirst face of a support substrate in silicon (2).
 30. Method accordingto any one of claims 23 to 28, characterised in that the transfer stageconsists of transferring a thin film of monocrystalline SiC (7). 31.Method according to claim 27, characterised in that the transfer of saidmonocrystalline thin film (7) is carried out with the intermediary of anadhesion layer (6) in SiO₂.
 32. Method according to claim 24,characterised in that the active layer (10) is formed by crystal growthon a layer of semiconducting material selected from the group consistingof SiC, GaN, the compounds III-V and their derivatives, and diamond. 33.Method according to any one of claims 23 to 32, characterised in thatthe production of means allowing vertical electron injection into theelectronic component comprises the deposit of an electrode (13) on theelectronic component and the deposit of an electrode (14) under theelectronic component, in said recess (11) enabling access to theelectronic component.
 34. Method according to claim 33, characterised inthat it comprises deposit of an earth (15) in said recess (11), incontact with said electrode (14) set under the component in order toconstitute a heat sink.
 35. Method according to any one of claims 23 to32, characterised in that it comprises the deposit of a conductingcoating (28) capable of guiding an electron beam (30) directed onto theelectronic component (25) passing in said recess (24).
 36. Methodaccording to any one of claims 23 to 32, characterised in that it alsocomprises the formation of cells (57, 58) prolonging the recess (56) ofthe support substrate (51) to allow electric or electronic access to theelectronic components (54, 55) formed from the structure.
 37. Methodaccording to any one of claims 23 to 32, characterised in that theformation stage of at least one electronic component consists ofproducing a component selected from the group consisting of lightemitters, light detectors, power electronic components and diodes. 38.Method according to any one of claims 23 to 32, characterised in thatthe transfer stage of a monocrystalline thin film (23) consists oftransferring a monocrystalline thin film such that the structure isvacuum sealed.
 39. Method according to claim 38, characterised in thatthe stage for transferring a monocrystalline thin film (23) consists oftransferring a monocrystalline thin film able to be crossed by anelectron beam.
 40. Method according to claim 38, characterised in thatthe stage for transferring a monocrystalline thin film consists oftransferring a monocrystalline thin film such that the structure forms amembrane deformable under the effect of a difference of pressure, thestage of forming at least one electronic component comprising theproduction of a component providing a signal indicative of thedeformation undergone by the membrane.